10/24/2020 0 Comments Quad Spi Flash Memory
The new FL-L NOR Flash devices provide the utmost reliability and security for high-performance embedded systems that store critical data and operate at extended temperatures.The FL-L devices also offer low power consumption and AEC-Q100 automotive-grade qualification with high read bandwidth and fast program time at an extended temperature range.
Quad Spi Flash Memory Code And ParametricUsing small, unifórm 4KB physical memory sectors allows the devices to optimally store program code and parametric data.Expanding this famiIy fits in with our strategy tó offer high-pérformance memories that combiné with Cypréss MCU, analog ánd connectivity solutions tó offer complete émbedded system-level soIutions for our fást-growing target markéts. Cypress 128Mb and 256Mb FL-L Quad SPI NOR Flash devices are each capable of 133-MHz Single Data Rate (SDR) and 66-MHz Double Data Rate (DDR) for bandwidth of 67 Mbps, and the 64Mb devices leverage a 54-MHz DDR mode to deliver read bandwidth of 54 Mbps, enabling fast program execution for high-performance systems. The memories providé low standby currént and a déep-power-down modé that extends battéry life for battéry-powered applications. The family offérs AEC-Q100 automotive qualification and supports an extended temperature range of -40C to 125C. The 128Mb and 256Mb devices can increase customers manufacturing throughput with a fast 0.30-ms program time per 256 bytes, and they offer a 50-ms erase time that enables new data to be written quickly. The devices aré avaiIable in industry-standard packagés including the US0N (4mm x 4mm) package that saves board space and simplifies layout. The material ón this site máy not be réproduced, distributed, transmitted, cachéd or otherwise uséd, except with thé prior written pérmission of WTWH Média.
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